Recent Developments in Multifunctional Integration

Stephan Guttowski
Head of Technology Park »Heterointegration«
Fraunhofer FMD

Abstract
New device technologies and applications with their ever increasing performance and functionality are driving the requirements and innovation for assembly and packaging. The technology boundaries between semiconductor technology, packaging and system design are becoming blurred. As a result chip, package and system designers will have to work closer together than ever before in order to drive the performance for future microelectronic systems. In addition heterogeneous integration will be an integral aspect for all future advanced electronic applications.

Biography
Dr.-Ing. Stephan Guttowski studied electrical engineering at TU Berlin, focusing on measuring and automation technology, and then went on to do a doctorate in electromechanical compatibility. He then did a post-doc at the Massachusetts Institute of Technology (M.I.T.) in Cambridge. After returning to Germany, Guttowski first worked in the electric drive research lab at DaimlerChrysler AG and, in 2001, moved to the Fraunhofer Institute for Reliability and Microintegration IZM. Here, he was initially chairman of the Advanced System Development group before taking over the System Design & Integration department. Since June 2017, Guttowski has been technology park manager in the FMD and, within this role, works towards cross-institute cooperation.

Versatile Silicon Photonic Platform for Datacom and Computercom Applications

Bertrand Szelag
Head of silicon photonic lab
CEA-LETI

Abstract
The explosive growth of information exchange requires scalable, high-yield and cost-effective integration of microsystems. Silicon photonics is becoming a technology of choice for optical communications. Compatibility with cmos manufacturing process is one key of success since it allows taking advantage of the production capacities of foundries; i.e. big volume and low cost manufacturability [1-2]. Integration of high performances devices is the key of success for these platforms. Today, many silicon platforms are available in foundry with similar device offer aiming to address at least 25 Gb/s applications. CEA-Leti has developed such base line silicon photonic technology with demonstrated results for 50 Gb/s data rate. New technological challenges are explored to improve the capacities of this platform by developing new integration schemes such as multilevel silicon, integration of a silicon nitride level on top of the silicon or heterogeneous materials and specific edge coupling processing. We are presenting here results on 3 add-on developed on our silicon photonic platform: • silicon nitride and hybrid silicon nitride on silicon device • Hybrid III-V on silicon laser • 3D packaging

Biography
Dr Bertrand SZELAG received the Master degree in Physics from the University of Lille in 1994 and the PhD degree in Microelectronics from the University of Grenoble in 1999. He has been a visiting researcher in Tohoku University in 1997 working in the field of sub-100nm CMOS transistor properties. In 1999 he joint STMicroelectronics in Crolles, France to work on BiCMOS platfrom development for Analog/RF applications. Since 2013, he has been with the LETI, MINATEC Institute, Grenoble, France as a Project Manager and senior process integration researcher in the field of silicon photonic devices. His current research activities included high speed silicon modulator, germanium photodetectors and hybrid III-V laser integration in silicon. He is the author or co-author of more than 50 papers in scientific journals and international conference proceedings in the field of CMOS, Bipolar and DMOS transistors and silicon photonic devices.