Cassandra Melvin
Senior Director, Business Development and Operations
SEMI Europe

Biography
Cassandra Melvin received her BS in Business Management and Neuropsychology at Rensselaer Polytechnic Institute and is Director of Operations at SEMI Europe.For the nine years prior to joining SEMI, she held the position Global Product Manager at Atotech Deutschland GmbH, where she was responsible for managing several hundred electroplating chemistry products in its Semiconductor and Functional Electronic Coatings division. She began her career at the SUNY Polytechnic Institute (formerly the College of Nanoscale Science and Engineering) as a Business Manager focused on strategic and technical programs for semiconductor chemistry and equipment manufacturers. She also held various project and program management roles in clean room operations and IT at SUNY.Cassandra's written work has been published in leading technical magazines and presented at key conferences globally. As an advocate for diversity and inclusion, she is actively involved in SEMI's efforts to promote diversity within the semiconductor industry.

AI – Enabling a Revolution in Chip Design Productivity

Tobias Bjerregaard
Senior Director of AI
Synopsys

Abstract
AI, and in particularly generative AI technologies, are set to transform entire industries. AI-based chip design flows are yielding better results and improving designer productivity by adding automation capabilities to assist human experts in the design process. In this talk I will look at the history of AI that has led us to this point and outline key uses of AI in EDA. I will look across the EDA stack at where AI-based approaches have made the highest impact and also look at how generative AI technologies can help capture human knowhow and as such help to mitigate the talent gap that the chip design industry is facing.

Biography
Tobias BjerregaardMBA in General Management, Copenhagen Business School (2017)PhD in Asynchronous Circuit Design and Networks-on-Chip, Technical University of Denmark (2005)MSEE in Solid State Physics, Technical University of Denmark (2000)CEO and founder of startup Teklatech, acquired by Synopsys in 2018. Currently Sr Director of AI at Synopsys, leading a group of AI R&D teams across the US and Europe that explores, develops and markets new EDA methods and tools based on advanced, state-of-the-art AI technologies

Cassandra Melvin
Senior Director, Business Development and Operations
SEMI Europe

Biography
Cassandra Melvin received her BS in Business Management and Neuropsychology at Rensselaer Polytechnic Institute and is Director of Operations at SEMI Europe.For the nine years prior to joining SEMI, she held the position Global Product Manager at Atotech Deutschland GmbH, where she was responsible for managing several hundred electroplating chemistry products in its Semiconductor and Functional Electronic Coatings division. She began her career at the SUNY Polytechnic Institute (formerly the College of Nanoscale Science and Engineering) as a Business Manager focused on strategic and technical programs for semiconductor chemistry and equipment manufacturers. She also held various project and program management roles in clean room operations and IT at SUNY.Cassandra's written work has been published in leading technical magazines and presented at key conferences globally. As an advocate for diversity and inclusion, she is actively involved in SEMI's efforts to promote diversity within the semiconductor industry.

Topic Coming Soon

Shana Massar
R&D Engineer
Imec

Abstract
Coming Soon

Biography
Coming Soon

Explore the Journey of a Young Engineer Driving Innovation in the Semiconductor Industry

Patrick Döll
Phyiscal Implementation Engineer
Racyics GmbH

Abstract
Get an insight to my journey as a SEMI 20 under 30 winner, from early years through university to managing cutting-edge projects in the semiconductor industry. Discover what the workday of a chip designer in a mid-tier business looks like and where the role extends beyond engineering to project management, marketing, and product leadership. In this talk, I will share my personal experiences and challenges, illustrating how a passion for semiconductors can lead you to diverse and rewarding career paths. Furthermore, together we will explore the world of semiconductor design within Racyics – Europe’s leading Design Partner for Integrated Circuits - and highlighting the unique opportunities for growth and innovation. We will also touch on the future opportunities within the company, offering insights into how these roles can evolve and intersect.Whether you're curious about the life of a chip designer or eager to explore broader opportunities in microelectronics, this talk offers valuable insights and inspiration for anyone at the start of their professional journey.

Biography
Patrick Döll is an experienced Physical IC Design Engineer at Racyics with a master's degree from the RWTH Aachen university, specializing in Micro- and Nanoelectronics. Due to his contribution to numerous tapeouts in advanced nodes, he shows expertise in the entire chip design process, from the initial design stage to the final product, which allows him to manage cutting-edge projects in the semiconductor industry. On top, he actively supports the Design Enablement Service of Racyics by participating in the product development of makeChip - a cloud-based chip design platform - and is involved in the company's marketing efforts.

Optical study of excitons via Fano resonance and intervalley scattering

Janina J. Schindler
PhD student
TU Dortmund

Abstract
The presentation focuses on spin-dark excitons involved in a novel kind of Fano resonance and on magneto-optical properties of bright excitons in a MoWSe₂ van der Waals heterostructure.In InGaAs quantum dots, the discrete bright-dark exciton transition interferes with a continuum of acoustic phonons. This quantum interference leads to spectral features, like an anti-resonance or a bipolar-shaped resonance, characteristic for a Fano process. It allows for a state-selective excitation and detection of the spin-dark exciton up to a temperature of 60 K. Its coupling to the phonon continuum and, in turn, the visibility of the Fano resonance is tuned nonlinearly by an external magnetic field and the optical pumping intensity. Moreover, the shape of the Fano resonance indicates the contribution of either absorbing or emitting phonons as well as allows for distinguishing between real exciton eigenstates and virtual states. Our observations make the spin-phonon Fano process highly attractive for studying optically inactive carrier complexes in semiconductor structures.In an hBN-encapsulated MoWSe₂ monolayer, we studied a novel way of resonantly addressing the spin and valley splitting in such kind of ternary alloy. We measured enhanced exciton g-factors directly through high-resolution photoluminescence and inelastic light scattering under resonant excitation of the intra- and intervalley excitons and trions. The scattering process is explained by an exchange-based valley-cross scattering, in which the hole stays at its initial valley while the electron is scattered to the opposite K valley under spin conservation. The recombination is governed by the electron and hole residing at opposite K valleys.

Biography
Dr. Janina J. Schindler studied physics at TU Dortmund University and completed her doctorate in the field of semiconductor and spin physics using high-resolution laser spectroscopy. She focused on exciton-phonon interactions in both GaAs-based quantum dots and two-dimensional quantum materials. During her PhD, she researched at the Institute of Physics in Warsaw, the Wrocław University of Science and Technology and the Ioffe Institute in St. Petersburg.

Damage-Free Plasma Enhanced Atomic Layer Deposition of AlOX Dielectrics for Tunable Doping of 2D Materials

Ardeshir Esteki
PhD student
RWTH Aachen University

Abstract
Two-dimensional materials (2DMs) such as graphene and transition metal dichalcogenides (TMDs) have great potential for heterogeneous integration with advanced silicon technology for future electronics^1–4. Most prominently, the latter are considered as channel materials in ultimately scaled metal oxide semiconductor field effect transistors (MOSFETs)^5–9. Two open challenges toward their application are the damage-free deposition of high-quality high-κ dielectrics on the 2DMs and controllable doping of the channel to adjust threshold voltages¹⁰.In this work, we deposited a non-stoichiometric aluminum oxide (AlOX) layer using an Oxford Instruments Atomfab^TM plasma enhanced atomic layer deposition (PEALD) system. This AlOX layer, containing nitrogen and carbon, differs from stoichiometric Al₂O₃. Short, low-power process steps with remote plasma conditions¹¹ were used to directly grow a thin layer of AlOX on commercially available graphene and on MoS₂ which was grown in an AIXTRON MOCVD reactor. Raman spectroscopy data showed no discernible deterioration of the 2DM compared to a standard Al₂O₃ process. We further validate the 2DM quality with electrical data from field-effect transistors (FETs) encapsulated with AlOX. The current-voltage measurements were performed in a four-point configuration to avoid a strong influence of the contact resistance before and after dielectric deposition under ambient conditions. The AlOX dielectric passivation improved the carrier mobilities in the devices. In addition, the process allows the tuning of graphene´s Dirac and MoS₂´s threshold voltages proportional to the thickness of the AlOX layer. Our results show that PEALD deposited AlOX provides a promising route for the encapsulation of 2DM-based electronic devices, as it improves device performance and can be used to tune the Dirac or threshold voltages at the same time.Acknowledgments: This work was funded by the European Union under the Horizon Europe grants 2D-EPL (952792), Graphene Flagship Core 3 (881603), and the German BMBF project GIMMIK (03XP0210).

Biography
Authors:Ardeshir Esteki¹, Sarah Riazimehr², Agata Piacentini^1,3, Harm Knoops^2,4, Martin Otto³, Gordon Rinke³, Zhenxing Wang³, Annika Grundmann⁵, Holger Kalisch⁵, Michael Heuken^5,6, Andrei Vescan⁵, Daniel Neumaier^3,7, Alwin Daus^1,8 andMax C. Lemme^1,31Chair of Electronic Devices, RWTH Aachen University, 52074 Aachen, Germany. ²Oxford Instruments Plasma Technology UK, Bristol BS494AP, United Kingdom. ³AMO GmbH, Advanced Microelectronic Center Aachen, 52074 Aachen, Germany. ⁴Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands. ⁵Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany. ⁶AIXTRON SE, 52134 Herzogenrath, Germany. ⁷Bergische Universität Wuppertal, 42119 Wuppertal, Germany. ⁸Sensors Laboratory, Department of Microsystems Engineering, University of Freiburg, 79110 Freiburg, Germany.References[1] Akinwande, D. et al., Nature (2019).[2] Das, S. et al., Nat. Electron. 4, 786–799 (2021).[3] Lemme, M. C. et al., Nat. Commun. 13, 1392 (2022).[4] Fei, W. et al., InfoMat 4, (2022).[5] Dorow, C. J. et al., IEDM 1–4 (2023).[6] Penumatcha, A. et al., IEDM 1–4 (2023).[7] Choi, S. et al., IEDM 1–6 (2023).[8] Chung, Y.-Y. et al., IEDM 1–4 (2023).[9] Chou, A.-S. et al., IEDM 1–4 (2023).[10] Illarionov, Y. Yu. et al., Nat. Commun. 11, 3385 (2020).[11] H. Knoops et al., J. Vac. Sci. Technol. A, 39(6), (2021).

Atomic Layer Etching of SiO₂ using SF₆

Rakshith Venugopal
Master's student
Center for Hybrid Nanostructures, University of Hamburg

Abstract
In the relentless pursuit of advancing semiconductor technologies, the demand for atomic layer processes has given rise to innovative processes. Atomic layer deposition has already played a significant role in the ongoing miniaturization features. In the meantime, atomic layer etching (ALE) is gaining increasing traction which offers better control over material removal at the atomic level. Our research focuses on using Sulfur hexafluoride (SF₆) and Ar Plasma to perform the ALE for etching silicon dioxide (SiO₂). In our ALE loop process, firstly SF₆ is injected to be adsorbed onto the SiO₂ surface. Secondly, Ar plasma is generated, following which, F radicals are produced which react with the surface to modify it into purgeable gaseous products. Here we show our ALE process on silicon dioxide wafer using SF₆ and Ar Plasma, obtaining a constant etching rate of around 0.14 nm/cycle across independent multiple-cycle runs. Combining the systematic exploration on operating pressure, temperature, plasma power, and SF₆ dose, it is confirmed that the SF₆ does not etch surfaces directly but forms a self-limiting layer, with etching initiated only by the presence of Ar plasma and F radicals. Additionally, detailed atomic force microscopy characterization over multiple cycles reveals minimal changes in surface roughness, presenting a conformal surface etching. Our research provides a dependable, reproducible, and highly controlled ALE process for SiO₂ etch-related nanofabrication process.

Biography
I am Rakshith Venugopal, a Master of Physics student at the University of Hamburg. I currently am working on my master thesis at the Center for Hybrid Nanosctructures (CHyN). After completing my Bachelor of Science in India, I started my journey in pursuing a master's in Hamburg. I gained a passion for nanosciences after starting my masters which pushed me into choosing the topic " Atomic Layer Etching of SiO₂ using SF₆" as my Master thesis topic.Contributing Authors: Prof. Dr. Robert H Blick, Dr. Robert Zierold, Jun PengCenter for Hybrid Nanostructures, Universität Hamburg

Mechanism of antiferroelectricity in polycrystalline ZrO₂

Richard Ganser
PhD Student
Munich University of Applied Sciences

Abstract
The size and electric field dependent induction of polarization in antiferroelectric ZrO₂ is the key to several technological applications that were unimaginable a decade ago. However, the lack of a deeper understanding of the mechanism hinders progress. Molecular dynamics simulations of polycrystalline ZrO₂, based on machine-learned interatomic forces with near ab initio quality, shed light on the fundamental mechanism of the size effect on the transition fields. Stress in the oxygen sublattice is the most important factor. The so constructed interatomic forces allow the calculation of the transition fields as a function of the ZrO₂ film thickness and predict the ferroelectricity at large thickness. The simulation results are validated with electrical and piezo response force microscopy measurements. The results allow a clear interpretation of the properties of the double-hysteresis loops as well as the construction of the free energy landscape of ZrO₂ grains.

Biography
Dear Ladies and Gentlemen,My name is Richard Ganser and I work as PhD student at the Munich University ofApplied Sciences since February 2021. After my bachelor’s degree in technical physics,I decided to deepen my knowledge of semiconductor electronics by studying micro- and nanotechnology. During my studies, I got to know the tools of modern semiconductor research and production from both the theoretical and experimental sides. Inspired by the rapid progress in the field of chip technology, I decided to pursue a PhD in the field of materials science with a focus on ultrathin ferroelectric films for use in state-of-the-art high-performance chips.The basic idea behind the use of ferroelectric materials is to utilize them as non-volatile random access memory, since the access speed is similar to that of classical RAM, i.e. a working memory that retains its last state when powered off. This development would revolutionize today’s computer technology by eliminating the separation between RAM and classic flash memory (hard disk). Even today, the bottleneck in high-performance AI chips is no longer the actual computing power, but the communication speed between RAM and flash, the so-called von Neumann bottleneck, which could be overcome by using FeRAM. FeRAM with ferroelectric PZT as gate layer has been on the market for a long time, but PZT loses its ferroelectric properties below 30nm thickness, which makes the required miniaturization impossible, due to the resulting limited transistor density the devices in question remain uneconomically large and low in performance. Hafnium- and zirconium oxide, introduced 10 years ago, offer an attractive alternative by retaining their ferroelectric properties down to a few nanometers. Much research is being carried out to stabilize and optimize the desired properties, both experimentally and theoretically, as the exact origin of the ferroelectric properties has not yet been conclusively clarified. As part of an international team with groups in France and Portugal, among others, we support our experimental project partners in Dresden with the help of computer simulations. These allow predictions to be made about remanent polarization and phase stability as a function of deformation, doping, and temperature. This requires enormous computing power, which is why we calculate on the SuperMUC in Garching. Despite the use of high-performance computing, conventional ab initio simulations are limited to a few hundred atoms and a few thousand simulation steps. A new method I am using is the use of machine-learned potentials based on ab initio training data. These potentials model the interaction, attraction and repulsion, of the individual atoms among each other and can thus be computed several thousand times larger, up to about 10 cubic nanometers, which corresponds to a realistic grain size in thin films, and several hundred times faster. This allows the investigation of temperature-dependent properties with high statistics and accuracy, such as the change in polarization and even phase transformations down to the smallest atomistic detail. In my work, I also coupled external electric fields to the ions. In this way, I obtained the extensive pyro- and piezoelectric properties of ZrO2 as a function of temperature, which include electrostriction, giant piezoelectric effects at the phase boundary, and negative genuine piezoelectric coefficients. By coupling electric fields into the transient simulation, the ferroelectric switching behavior can be simulated and questions such as the writing speed, which is of enormous importance for use in high-performance computers, can be answered.Another question that remains unanswered is how to stabilize the antiferroelectricity in zirconia. While zirconia crystallizes in a weakly dielectric phase, the monoclinic phase, as a bulk material, e.g. used as dental prosthesis, a strongly dielectric phase, the tetragonal phase, is formed in films below 10 nm, which is already used today as a high-k gate material. Ab initio calculations of pure crystals show that the tetragonal phase transitions to the monoclinic phase due to the higher free energy, which is a discrepancy between simulations and experiments in thin films. Using machine-learned potentials with molecular dynamics simulations, we can simulate a polycrystalline ZrO2 thin film including the grain boundary, stabilize the tetragonal phase at room temperature and investigate the piezoelectric response in direct comparison with experimental piezoelectric force microscopy data. This result represents a breakthrough in solid-state materials simulation and is currently being published in great detail in Advanced Functional Materials. After stabilizing the antiferroelectricity at room temperature in simulations and experiments, the next step in simulation is the addition of hafnium to the machine-learned potential to stabilize the ferroelectric phase over a wider range of film thicknesses and grain sizes, in agreement with experimental results, and to allow a gradual polarization of the films, for example via the grain size distribution. This gradual polarization of the films is of great industrial interest as it allows the modeling of individual synapses. The degree of polarisation and thus the current flowing through the FET is used to store the weight, the strength of the connection between the synapses, in the neuronal network. This hardware approach could enable significant miniaturization of the required computing architecture and lay the foundation for the development of future AI.Sincerely yours,Richard Ganser

Performance Analysis and Implementation of Automated LLM-basedTechniques for Crosslanguage Code Conversion and Acceleration of HardwareSoC Development

Vladyslav Romashchenko
Research scientist
Anhalt University of Applied Sciences

Abstract
Developing complex systems often necessitates collaboration between software and hardware teamsusing high-level and low-level programming languages. For narrowly focused companies, which typicallyhave fixed sized number of specialists in application design, this programming language barrier canresult in code inefficiencies, extended development cycles, a significant number of bugs, and challengesrelated to efficient architecture design and debugging strategies. Recent advancements in MachineLearning (ML) and Large Language Models (LLM) such as CodeT5, Copilot, GPT-4o, AI-HDLCoder etc. haveopened up new possibilities for automating code generation tasks. However, the proposed models arenot cross language based in terms of code programming, and need a short, clear description of atechnical task based on Natural Language Processing (NLP) techniques. The proposed work, on the otherside, represents the novel instrument demonstrating the AI potential to bridge the gap between pythonhigh-level developers and low -level hardware programmers that are using the VHDL language to realizenumerous FPGA-based architectures. Exploring different approaches of python instruments and usingknowledge of traditional code converters, the proposed work tries to solve the challenges of automatedPython to VHDL code generation without additional verification / validation steps and simplify the pitfallsof software obsolescence. Sufficient results or comprehensive approaches need to influence the researchand industry application development backgrounds for further matched cooperations and investigationsof code generators and compilers, empowering the Industry 5.0 by new generation of code conversionframeworks for rapid prototyping and fast migration of FPGA-based hardware designs, which can lead toplanned decrease in additional financial expanses or minimization of development time for a certainproject under application development phase.

Biography
Vladyslav Romashchenko2018-now — Research Scientist and Doktorand. Field of Study: Automated VHDL code Synthesisers and Code Generators. Hochschule Anhalt. Germany2016-2018 — Master of Engineering. Double Degree Programme. Field of Study: Elektro und Informationstechnik. Hochschule Anhalt. Germany2014-2018 — Master of Engineering. Double Degree Programme. Field of Study: Telecommunications in Economy and Business, Odessa National Academy of Telecommunication. Ukraine.2019-2015 — Bachelor of Engineering. Field of Study: Telecommunication, Odessa National Academy of Telecommunication. Ukraine.2009-2013 — Smila Engineering Professional College, Field of study: Maintenance of computerized, integrated and robotic systems.Yevhenii Holopotyliuk08.02.1999HSA, Master, Electrical and ComputerEducation:1 Hochschule AnhaltMaster, Electrical and Computer Engineering (MA)Dec 2022 - Present2 Odessa National Polytechnic UniversityMaster, Information and technology (126)2021 - 20233 Odessa National Polytechnic UniversityBachelor, Information and technology (126)Aug 2018 - Jul 2021Experience:1 Hochschule Anhalt / Köthen (Anhalt) (Deutschland)Februar 2023 - September 2023Wordpress Developer2 BeSale/ Odessa (Ukraine)August 2019 - November 2023Founder, Development Team Lead3 CosmoPay/ Odessa (Ukraine)September 2018 - Juni 2019Founder, Development Team Lead4 ООО "Тавис"/ Nowa Kachowka (Ukraine)Mai 2015 - September 2015Junior Full Stack Web Developer